@Article{TrushinKupYinGraAla:2015:AtMeSt,
               author = "Trushin, O. S. and Kupryanov, A. N. and Ying, S. -C. and Granato, 
                         Enzo and Ala-Nissila, T.",
          affiliation = "{Academy of Sciences of Russia} and {Academy of Sciences of 
                         Russia} and {Brown University} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Aalto University School of 
                         Science}",
                title = "Atomic mechanisms of strain relaxation in heteroepitaxial 
                         Cu/Ni(001) system",
              journal = "Russian Microelectronics",
                 year = "2015",
               volume = "44",
               number = "6",
                pages = "410--413",
                month = "Nov.",
             keywords = "Activation barriers, Atomic mechanism, Critical thickness, EAM 
                         potential, Heteroepitaxial, Molecular statics, Semi-empirical, 
                         Strain relief.",
             abstract = "Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are 
                         studied using molecular static methods with semiempirical EAM 
                         potentials. In particular, the process of a V-shape defect 
                         (internal (111) faceting) nucleation is considered, and the 
                         corresponding activation barriers and critical thicknesses are 
                         estimated.",
                  doi = "10.1134/S1063739715060086",
                  url = "http://dx.doi.org/10.1134/S1063739715060086",
                 issn = "1063-7397",
             language = "en",
           targetfile = "2015_truchin.pdf",
        urlaccessdate = "28 abr. 2024"
}